7 results
A comparative study of Y3+- or/and La3+-doped CeO2–ZrO2-based solid solution
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- Journal:
- Journal of Materials Research / Volume 28 / Issue 6 / 28 March 2013
- Published online by Cambridge University Press:
- 01 February 2013, pp. 887-896
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- 28 March 2013
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Structural characterization of GaN single crystal layers grown by vapor transport from a gallium oxide (Ga2O3) powder source
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- Journal:
- MRS Online Proceedings Library Archive / Volume 892 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, 0892-FF30-07
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- 2005
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Rapid growth of bulk GaN crystal using GaN powder as source material
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- Journal:
- MRS Online Proceedings Library Archive / Volume 892 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, 0892-FF30-01
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- 2005
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Luminescence and Lifetime Properties of Europium Doped Gallium Nitride Compatible with CMOS Technology
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- Journal:
- MRS Online Proceedings Library Archive / Volume 866 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, V3.2
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- 2005
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Growth and Characterization of bulk GaN by Ga Vapor Transport
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- Journal:
- MRS Online Proceedings Library Archive / Volume 831 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, E11.33
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- 2004
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X-ray characterization of GaN single crystal layers grown by the ammonothermal technique on HVPE GaN seeds and by the sublimation technique on sapphire seeds
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- Journal:
- MRS Online Proceedings Library Archive / Volume 831 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, E8.23
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- 2004
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High Quality, Low Cost Continuous Poly-GaN Film on Si and Glass Substrates Produced by Spin Coating
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- Journal:
- MRS Online Proceedings Library Archive / Volume 831 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, E8.2
- Print publication:
- 2004
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